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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP101 DESCRIPTION *High DC Current Gain: hFE = 1000(Min)@ IC= 3A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 80V(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 3A = 2.5V(Max)@ IC= 8A *Complement to Type TIP106 APPLICATIONS *Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation @TC=25 Collector Power Dissipation @Ta=25 Junction Temperature Storage Temperature Range VALUE 80 80 5 8 15 1 80 UNIT V V V A A A PC W 2 150 -65~150 Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.56 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TIP101 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA B 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A, IB= 80mA B 2.5 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 4V 2.8 V ICBO Collector Cutoff Current VCB= 80V, IE= 0 50 A ICEO Collector Cutoff Current VCE= 40V, IB= 0 50 A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 8 mA hFE-1 DC Current Gain IC= 3A; VCE= 4V 1000 20000 hFE-2 DC Current Gain IC= 8A; VCE= 4V 200 COB Output Capacitance IE= 0; VCB= 10V,f= 0.1MHz 200 pF isc Websitewww.iscsemi.cn |
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